Modulation Characteristics of High-Speed Transistor Lasers
نویسندگان
چکیده
The spontaneous emission recombination lifetime of carriers in the active region transistor lasers (TLs) is significantly reduced due to accelerated carrier transport base under collector bias. Thus, it has potential for use as a high-speed optical fiber communication light source. unique three-electrode structure TL notably enriches modulation methods As an important parameter measure data transfer rate, bandwidth been studied extensively. This paper briefly analyzes inherent characteristics and advantages then discusses progress research on characteristics. Currently, common increase rate include optimizing device structure, intracavity photon-assisted tunneling, adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based can achieve error-free transmission 22 Gb/s, simulation show that InP- TL, this reach 40 Gb/s. Finally, challenges faced by area are elucidated.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2022
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app12094475